Onsemi SMMBT3904LT1G
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Enhance your electronics project with the SMMBT3904LT1G from Onsemi, a top-tier manufacturer known for reliable components. This NPN transistor offers superior performance in small signal applications, making it ideal for amplification and switching tasks. With a compact package design and high DC current gain, this transistor delivers efficiency and precision. Trust Onsemi to provide quality products that elevate your projects to the next level. Choose the SMMBT3904LT1G for unparalleled value and excellence in electronic components.
Package Body Material: PLASTIC/EPOXY
The use of plastic/epoxy material in the package body makes this transistor lightweight and durable, suitable for various electronic applications.
Polarity or Channel Type: NPN
NPN transistors are commonly used in amplification and switching applications, making this product versatile in different circuit designs.
Configuration: SINGLE
The single configuration simplifies circuit design and ensures easy integration into electronic devices.
Surface Mount: YES
Being surface mountable, this transistor allows for easier and more efficient PCB assembly.
Maximum Operating Temperature: 150 °C
With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, ensuring stable performance in various environments.
Maximum Collector-Emitter Voltage: 40 V
The high maximum collector-emitter voltage rating of 40V provides a wide voltage range for different applications, increasing the versatility of this transistor.
Nominal Transition Frequency (fT): 300 MHz
The high nominal transition frequency of 300 MHz indicates the speed at which this transistor can switch, making it suitable for high-frequency applications such as RF amplification.
| Nominal Transition Frequency (fT): | 300 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .2 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Turn On Time (ton): | 70 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 250 ns |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 30 |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
