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Infineon Technologies 2N7002DWH6327XTSA1

2N7002DWH6327XTSA1 by Infineon Technologies

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Infineon Technologies

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Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING;

Enhance your electronic projects with the high-quality 2N7002DWH6327XTSA1 Small Signal Field Effect Transistor from Infineon Technologies. With a focus on innovation and reliability, Infineon is a trusted manufacturer known for delivering top-notch components. This N-channel transistor is perfect for switching applications, offering a breakthrough in performance and efficiency. Its compact design, built-in diode, and low resistance make it a versatile choice for various projects. Trust in the value and benefits of this product to elevate your creations to new heights.

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications and environments.

Polarity or Channel Type: N-CHANNEL

Offers efficient and fast switching characteristics, ideal for many electronic circuits and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile usage in circuits requiring multiple elements with the added functionality of a built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Offers a high breakdown voltage, providing an extra margin of safety in high voltage applications.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and simplifying assembly processes.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Features advanced MOSFET technology for efficient and high-performance transistor operation.

Maximum Drain Current (ID): 0.3 A

Can handle a maximum drain current of 0.3 A, suitable for various low-power applications.

Maximum Drain-Source On Resistance: 3 ohm

Provides low on-resistance for efficient power handling and reduced heat dissipation.

Maximum Feedback Capacitance (Crss): 3 pF

Low feedback capacitance helps in reducing signal distortion and improving overall circuit performance.

Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	3 pF
Maximum Drain Current (ID):	.3 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	3 ohm
Moisture Sensitivity Level (MSL):	1

ECCN	EAR99
ECCN Governance	EAR

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