Package Body Material: |
PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): |
30 |
Configuration: |
SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: |
SILICON |
Field Effect Transistor Technology: |
METAL-OXIDE SEMICONDUCTOR |
Transistor Application: |
SWITCHING |
Maximum Drain Current (ID): |
.115 A |
Sub-Category: |
FET General Purpose Powers |
Surface Mount: |
YES |
Terminal Finish: |
MATTE TIN |
No. of Terminals: |
3 |
Maximum Power Dissipation (Abs): |
.2 W |
Terminal Position: |
DUAL |
Package Style (Meter): |
SMALL OUTLINE |
JESD-30 Code: |
R-PDSO-G3 |
No. of Elements: |
1 |
Package Shape: |
RECTANGULAR |
Terminal Form: |
GULL WING |
Operating Mode: |
ENHANCEMENT MODE |
Maximum Operating Temperature: |
150 Cel |
Maximum Drain-Source On Resistance: |
7.5 ohm |
Moisture Sensitivity Level (MSL): |
1 |
Maximum Feedback Capacitance (Crss): |
5 pF |
JEDEC-95 Code: |
TO-236AB |
Polarity or Channel Type: |
N-CHANNEL |
JESD-609 Code: |
e3 |
Minimum Operating Temperature: |
-55 Cel |
Minimum DS Breakdown Voltage: |
60 V |
Qualification: |
Not Qualified |
Maximum Drain Current (Abs) (ID): |
.115 A |
Peak Reflow Temperature (C): |
260 |