| Package Body Material: |
PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): |
30 |
| Configuration: |
SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: |
SILICON |
| Field Effect Transistor Technology: |
METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: |
SWITCHING |
| Maximum Drain Current (ID): |
15 A |
| Maximum Pulsed Drain Current (IDM): |
45 A |
| Sub-Category: |
Other Transistors |
| Surface Mount: |
YES |
| Terminal Finish: |
MATTE TIN |
| No. of Terminals: |
2 |
| Maximum Power Dissipation (Abs): |
42 W |
| Terminal Position: |
SINGLE |
| Package Style (Meter): |
SMALL OUTLINE |
| JESD-30 Code: |
R-PSSO-G2 |
| No. of Elements: |
1 |
| Package Shape: |
RECTANGULAR |
| Terminal Form: |
GULL WING |
| Operating Mode: |
ENHANCEMENT MODE |
| Maximum Operating Temperature: |
175 Cel |
| Case Connection: |
DRAIN |
| Maximum Drain-Source On Resistance: |
.1 ohm |
| Moisture Sensitivity Level (MSL): |
1 |
| Avalanche Energy Rating (EAS): |
90 mJ |
| JEDEC-95 Code: |
TO-252 |
| Polarity or Channel Type: |
P-CHANNEL |
| JESD-609 Code: |
e3 |
| Minimum DS Breakdown Voltage: |
60 V |
| Qualification: |
Not Qualified |
| Maximum Drain Current (Abs) (ID): |
15 A |
| Peak Reflow Temperature (C): |
260 |
