General Semiconductor BSS138

BSS138 by General Semiconductor
Lifecycle Status
Transferred
Manufacturer
General Semiconductor
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Description
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .22 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 6 ohm
Maximum Feedback Capacitance (Crss): 10 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
ECCN EAR99
ECCN Governance EAR
NSN 5961-01-458-1675, 5961014581675, 5962-01-578-1980, 5962015781980
NIIN 014581675, 015781980