Diodes Incorporated 2N7002-7-F

2N7002-7-F by Diodes Incorporated
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Diodes Incorporated
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Description
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Qualification: Not Qualified;

Upgrade your electronics with the 2N7002-7-F by Diodes Incorporated, a top-notch N-CHANNEL Field Effect Transistor perfect for switching applications. With a sleek rectangular package design and gull wing terminals, this transistor offers high-quality performance and reliability. Enhance your devices with its enhanced mode operation and built-in diode configuration. Trust in the expertise of Diodes Incorporated to deliver cutting-edge technology that meets your needs. Elevate your projects with the 2N7002-7-F and experience the value and benefits it brings to your applications.

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching in electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, making it suitable for a variety of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode, simplifying circuit design and saving space.

Maximum Drain Current (Abs) (ID): 0.115 A

Capable of handling moderately high currents, suitable for many electronic systems.

Maximum Power Dissipation (Abs): 0.3 W

Can dissipate heat effectively, preventing overheating and ensuring reliability.

Maximum Drain-Source On Resistance: 13.5 ohm

Low on-resistance contributes to efficient switching and power handling.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, suitable for various environments.

Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .115 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 13.5 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 5 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY, LOW THRESHOLD
Maximum Drain Current (Abs) (ID): .115 A
Peak Reflow Temperature (C): 260
ECCN EAR99
ECCN Governance EAR