Diodes Incorporated BSS123-7-F
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Unlock new possibilities with the BSS123-7-F by Diodes Incorporated, a high-quality small signal field-effect transistor with N-channel polarity and a single configuration with a built-in diode. Ideal for switching applications, this surface-mount device offers a maximum DS breakdown voltage of 100V and a maximum drain current of 0.17A. With a package style of small outline and a maximum operating temperature of 150°C, this enhancement mode transistor provides reliable performance in various electronic systems. Trust in Diodes Incorporated's expertise and enhance your designs with the BSS123-7-F for efficient and effective operation.
Package Body Material: PLASTIC/EPOXY
Provides durability and protection for the transistor, ensuring long-term reliability.
Polarity or Channel Type: N-CHANNEL
Allows for efficient switching applications, making it suitable for a wide range of electronic devices.
Configuration: SINGLE WITH BUILT-IN DIODE
Includes a built-in diode for added functionality and versatility in circuit design.
Transistor Application: SWITCHING
Designed specifically for switching applications, offering high performance in this function.
Surface Mount: YES
Enables easy and convenient installation on circuit boards, saving space and simplifying assembly.
Minimum DS Breakdown Voltage: 100 V
With a high breakdown voltage, this transistor can handle higher voltages without damage, ensuring robustness in operation.
Maximum Drain Current (Abs) (ID): 0.17 A
Capable of handling a maximum drain current of 0.17 A, making it suitable for various power requirements.
Maximum Power Dissipation (Abs): 0.3 W
With a maximum power dissipation of 0.3 W, this transistor can efficiently handle power without overheating.
Maximum Operating Temperature: 150 °C
Operates effectively at high temperatures, suitable for various environmental conditions.
Minimum Operating Temperature: -55 °C
Capable of functioning in low-temperature environments, offering versatility in usage.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .17 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 6 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Feedback Capacitance (Crss): | 6 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .17 A |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
