| Package Body Material: |
PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): |
30 |
| Configuration: |
SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: |
SILICON |
| Field Effect Transistor Technology: |
METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: |
SWITCHING |
| Maximum Turn On Time (ton): |
43 ns |
| Maximum Drain Current (ID): |
4.3 A |
| Maximum Pulsed Drain Current (IDM): |
34 A |
| Sub-Category: |
Other Transistors |
| Surface Mount: |
YES |
| Terminal Finish: |
MATTE TIN |
| No. of Terminals: |
3 |
| Maximum Power Dissipation (Abs): |
1.3 W |
| Terminal Position: |
DUAL |
| Package Style (Meter): |
SMALL OUTLINE |
| Maximum Turn Off Time (toff): |
460 ns |
| JESD-30 Code: |
R-PDSO-G3 |
| No. of Elements: |
1 |
| Package Shape: |
RECTANGULAR |
| Terminal Form: |
GULL WING |
| Operating Mode: |
ENHANCEMENT MODE |
| Maximum Operating Temperature: |
150 Cel |
| Maximum Drain-Source On Resistance: |
.05 ohm |
| Moisture Sensitivity Level (MSL): |
1 |
| Avalanche Energy Rating (EAS): |
33 mJ |
| Other Names: |
IRLML6401GTRPBF-ND<br>IRLML6401GTRPBF<br>IRLML6401PBFCT<br>SP001577044<br>IRLML6401GTRPBFCT<br>IRLML6401GTRPBFTR<br>IRLML6401GTRPBFDKR<br>IRLML6401GTRPBFCT-ND<br>IRLML6401GTRPBFDKR-ND<br>IRLML6401GTRPBFTR-ND<br>IRLML6401PBFDKR<br>SP001568584<br>IRLML6401PBFTR<br>*IRLML6401TRPBF |
| Maximum Feedback Capacitance (Crss): |
125 pF |
| JEDEC-95 Code: |
TO-236AB |
| Polarity or Channel Type: |
P-CHANNEL |
| JESD-609 Code: |
e3 |
| Minimum Operating Temperature: |
-55 Cel |
| Minimum DS Breakdown Voltage: |
12 V |
| Qualification: |
Not Qualified |
| Additional Features: |
HIGH RELIABILITY |
| Maximum Drain Current (Abs) (ID): |
4.3 A |
| Peak Reflow Temperature (C): |
260 |
