| Package Body Material: |
PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): |
30 |
| Configuration: |
SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: |
SILICON |
| Field Effect Transistor Technology: |
METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: |
SWITCHING |
| Maximum Drain Current (ID): |
.36 A |
| Surface Mount: |
YES |
| Terminal Finish: |
TIN |
| No. of Terminals: |
3 |
| Terminal Position: |
DUAL |
| Package Style (Meter): |
SMALL OUTLINE |
| JESD-30 Code: |
R-PDSO-G3 |
| No. of Elements: |
1 |
| Package Shape: |
RECTANGULAR |
| Terminal Form: |
GULL WING |
| Operating Mode: |
ENHANCEMENT MODE |
| Maximum Operating Temperature: |
150 Cel |
| Maximum Drain-Source On Resistance: |
1.6 ohm |
| Moisture Sensitivity Level (MSL): |
1 |
| Other Names: |
568-10307-6-ND<br>1727-1141-6<br>1727-1141-2<br>568-10307-2<br>568-10307-1-ND<br>568-10307-1<br>568-10307-2-ND<br>568-10307-6<br>1727-1141-1<br>5202-BSS138BK,215TR<br>934065729215<br>2156-BSS138BK,215TR<br>BSS138BK215<br>BSS138BK,215-ND |
| JEDEC-95 Code: |
TO-236AB |
| Polarity or Channel Type: |
N-CHANNEL |
| JESD-609 Code: |
e3 |
| Minimum Operating Temperature: |
-55 Cel |
| Minimum DS Breakdown Voltage: |
60 V |
| Additional Features: |
LOGIC LEVEL COMPATIBLE |
| Reference Standard: |
AEC-Q101; IEC-60134 |
| Peak Reflow Temperature (C): |
260 |