North American Philips Discrete Products Div BSS138
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Description
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .2 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| Maximum Power Dissipation (Abs): | .36 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .2 A |
| ECCN | EAR99 |
| ECCN Governance | EAR |
| NSN | 5961-01-458-1675, 5961014581675, 5962-01-578-1980, 5962015781980 |
| NIIN | 014581675, 015781980 |
