Formosa Microsemi 2N7002

2N7002 by Formosa Microsemi
Lifecycle Status
Active
Manufacturer
Formosa Microsemi
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Description
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
Maximum Power Dissipation (Abs): .225 W
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .115 A
Maximum Drain Current (Abs) (ID): .115 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
ECCN EAR99
ECCN Governance EAR
NSN 5961-01-364-7859, 5961013647859, 5961-01-615-7494, 5961016157494
NIIN 013647859, 016157494