Formosa Microsemi 2N7002

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Maximum Power Dissipation (Abs): | .225 W |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
No. of Elements: | 1 |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (ID): | .115 A |
Maximum Drain Current (Abs) (ID): | .115 A |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | 260 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
ECCN | EAR99 |
ECCN Governance | EAR |
NSN | 5961-01-364-7859, 5961013647859, 5961-01-615-7494, 5961016157494 |
NIIN | 013647859, 016157494 |