Infineon Technologies BSS123NH6327XTSA1
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Enhance your electronic projects with the high-quality BSS123NH6327XTSA1 from Infineon Technologies. As a leading manufacturer, Infineon Technologies delivers top-notch Small Signal Field Effect Transistors (FET) like this N-CHANNEL transistor with a single configuration and built-in diode. Ideal for a variety of applications, this transistor offers customers exceptional value with its reliability, efficiency, and performance. Upgrade your designs with the best in semiconductor technology and experience the benefits of Infineon's innovative solutions.
Package Body Material: PLASTIC/EPOXY
Provides durability and protection for the internal components of the FET, ensuring long-term reliability.
Polarity or Channel Type: N-CHANNEL
N-channel FETs generally offer better performance and efficiency compared to P-channel FETs, making them a preferred choice in many applications.
Configuration: SINGLE WITH BUILT-IN DIODE
The built-in diode allows for easy circuit design and protects against reverse voltage, making this FET versatile and user-friendly.
Operating Mode: ENHANCEMENT MODE
Enhancement mode FETs are easier to control and ideal for applications requiring high efficiency and low power consumption.
Maximum DS Breakdown Voltage: 100 V
High breakdown voltage provides safety margin and reliability in high voltage applications.
Maximum Drain Current (ID): 0.19 A
Sufficient drain current rating for small signal applications, ensuring reliable performance under specified conditions.
Maximum Drain-Source On Resistance: 6 ohm
Low on-resistance minimizes power loss and improves efficiency in the circuit.
Maximum Feedback Capacitance (Crss): 3.1 pF
Low feedback capacitance helps in reducing signal distortion and improving high-frequency performance of the FET.
Reference Standard: AEC-Q101
Compliance with automotive grade quality standard ensures reliability and durability, making it suitable for demanding applications in automotive electronics.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .19 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | 6 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Feedback Capacitance (Crss): | 3.1 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 100 V |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
