NXP Semiconductors BSS138BKW,115
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Experience superior performance and reliability with the NXP Semiconductors BSS138BKW,115 Small Signal Field Effect Transistor. Designed for switching applications, this N-CHANNEL transistor offers a breakthrough in efficiency and functionality. With a high DS breakdown voltage of 60V and maximum drain current of 0.32A, this transistor ensures optimal performance. Its single configuration with built-in diode and enhancement mode operation make it an ideal choice for a wide range of electronic projects. Trust NXP Semiconductors to deliver cutting-edge technology that meets your needs for quality and innovation.
Package Body Material: PLASTIC/EPOXY
Plastic/epoxy material provides durability and helps protect the internal components of the transistor.
Polarity or Channel Type: N-CHANNEL
N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors.
Minimum DS Breakdown Voltage: 60 V
With a minimum breakdown voltage of 60V, this transistor can handle higher voltages safely.
Transistor Application: SWITCHING
Designed for switching applications, this transistor can efficiently control the flow of current in a circuit.
Surface Mount: YES
Surface mount technology allows for easy and compact PCB assembly, saving space in electronic devices.
Maximum Drain Current (ID): 0.32 A
With a maximum drain current of 0.32A, this transistor can handle moderate current loads effectively.
Maximum Drain-Source On Resistance: 1.6 ohm
Low drain-source on resistance of 1.6 ohms ensures minimal power loss and efficient operation.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .32 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | 1.6 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
