NXP Semiconductors BSS138PS,115

BSS138PS,115 by NXP Semiconductors
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NXP Semiconductors
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Description
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Discover the power of the BSS138PS,115 by NXP Semiconductors, a top-quality N-CHANNEL Small Signal Field Effect Transistor (FET) perfect for switching applications. With a robust design and built-in diode, this transistor offers reliability and efficiency like no other. Whether you're looking to enhance your electronic projects or streamline your manufacturing processes, the BSS138PS,115 delivers unmatched performance and value. Upgrade your devices with this cutting-edge technology and experience the difference today.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better conductivity and lower resistance, making them efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages, adding to its versatility.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Drain Current (ID): 0.32 A

With a maximum drain current of 0.32 A, this transistor can handle moderate current loads with efficiency.

Maximum Drain-Source On Resistance: 1.6 ohm

Low drain-source resistance of 1.6 ohm ensures minimal power loss and efficient performance in switching applications.

Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .32 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1.6 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
ECCN EAR99
ECCN Governance EAR