Onsemi MMBT2222ALT1G
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Upgrade your electronic devices with the high-quality MMBT2222ALT1G by Onsemi, a leading manufacturer in the industry. This NPN small signal bipolar junction transistor is perfect for switching applications, offering reliability and efficiency. With its compact size and impressive performance, this transistor is a must-have component for your projects. Trust Onsemi to deliver top-notch products that provide value and benefits to customers. Experience the advantages of using the MMBT2222ALT1G and take your creations to the next level.
Package Body Material: PLASTIC/EPOXY
PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for a wide range of applications.
Polarity or Channel Type: NPN
NPN transistors are commonly used in switching circuits, amplifiers, and various electronic applications, providing versatility.
Transistor Application: SWITCHING
Designed specifically for switching applications, this transistor offers reliable performance and fast response times.
Maximum Power Dissipation: 0.3 W
With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels efficiently.
Minimum DC Current Gain (hFE): 75
A high minimum DC current gain of 75 ensures stable and consistent amplification in various circuit designs.
Maximum Collector-Emmitter Voltage: 40 V
The high maximum collector-emitter voltage of 40 V allows for operation in a wide range of voltage levels.
Maximum Operating Temperature: 150 °C
With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.
Nominal Transition Frequency (fT): 300 MHz
The high nominal transition frequency of 300 MHz ensures fast response and high-frequency operation, making it ideal for high-speed applications.
| Nominal Transition Frequency (fT): | 300 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .6 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 35 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 285 ns |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 75 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
| HTS | 8541.21.00.95 |
| SB | 8541.21.00.80 |
| NSN | 5961-01-577-2754, 5961015772754 |
| NIIN | 015772754 |
