Infineon Technologies IRLML6402TRPBF
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Upgrade your power applications with the IRLML6402TRPBF from Infineon Technologies. This P-Channel Power Field Effect Transistor offers superior performance and reliability, making it an ideal choice for switching tasks. With a single configuration and built-in diode, this transistor provides seamless operation and efficient power management. Whether you're working on automotive, industrial, or consumer electronics projects, this transistor's high-quality design and enhanced mode operation ensure optimal functionality. Trust in Infineon Technologies to deliver cutting-edge technology that exceeds your expectations.
Package Body Material: PLASTIC/EPOXY
The use of plastic/epoxy material provides durability and protection for the transistor, making it a reliable choice for various applications.
Polarity or Channel Type: P-CHANNEL
The P-channel configuration allows for efficient current control and management, making this transistor suitable for switching applications.
Configuration: SINGLE WITH BUILT-IN DIODE
The built-in diode simplifies circuit design and saves space, offering convenience and versatility in use.
Transistor Application: SWITCHING
Designed specifically for switching operations, this transistor ensures precise and efficient performance in electronic devices.
Surface Mount: YES
With surface mount capability, this transistor can be easily integrated into compact and densely populated circuit boards for space-saving solutions.
Minimum DS Breakdown Voltage: 20 V
The high breakdown voltage ensures reliable performance and protection against voltage spikes, enhancing the durability of the transistor.
Package Shape: RECTANGULAR
The rectangular shape allows for easy and secure placement of the transistor on the circuit board, facilitating installation and assembly.
Terminal Form: GULL WING
The gull wing terminal form provides a secure connection and ease of soldering, ensuring stable and reliable performance in various applications.
Operating Mode: ENHANCEMENT MODE
The enhancement mode operation offers precise control and high efficiency, making this transistor ideal for power management applications.
Maximum Pulsed Drain Current (IDM): 22 A
With a high pulsed drain current rating, this transistor can handle sudden power surges and peaks, ensuring stable operation in demanding conditions.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.7 A |
| Maximum Pulsed Drain Current (IDM): | 22 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1.3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 1.3 W |
| Maximum Drain-Source On Resistance: | .065 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 11 mJ |
| Maximum Feedback Capacitance (Crss): | 110 pF |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Additional Features: | ULTRA LOW RESISTANCE |
| Maximum Drain Current (Abs) (ID): | 3.7 A |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
| HTS | 8541.29.00.95 |
| SB | 8541.29.00.80 |
