2N7002 Samsung | Transistors

Samsung 2N7002

Lifecycle Status

Discontinued

Manufacturer

Samsung

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Description

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

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Other Names:	2N7002NTR<br>2N7002NTR-NDR<br>2N7002N<br>2N7002NCT-NDR<br>2156-2N7002-OS<br>2N7002NCT<br>2N7002NDKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.115 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.115 A
Maximum Drain-Source On Resistance:	5 ohm

ECCN	EAR99
ECCN Governance	EAR
NSN	5961-01-364-7859, 5961013647859, 5961-01-615-7494, 5961016157494
NIIN	013647859, 016157494

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