NXP Semiconductors 2N7002,215

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Looking for reliable small signal field-effect transistors? Look no further than the 2N7002,215 by NXP Semiconductors! With a reputation for top-notch quality and innovative technology, NXP Semiconductors delivers products that exceed expectations. The 2N7002,215 is perfect for switching applications, offering enhanced performance and reliability. Its N-channel configuration and built-in diode make it versatile and efficient. Trust NXP Semiconductors to provide you with the best in semiconductor technology. Experience the value and benefits of the 2N7002,215 for yourself!
Package Body Material: PLASTIC/EPOXY
Plastic and epoxy materials provide good durability and protection for the transistor, ensuring a longer lifespan.
Polarity or Channel Type: N-CHANNEL
N-channel transistors generally have higher electron mobility and faster switching speeds, making them suitable for switching applications.
Configuration: SINGLE WITH BUILT-IN DIODE
Built-in diode allows for easier and more efficient circuit design, saving space and reducing component count.
Transistor Application: SWITCHING
Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.
Maximum Drain-Source On Resistance: 5 ohm
Low on-resistance leads to minimal power loss and heat generation, making the transistor energy-efficient.
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .3 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .2 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 5 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 10 pF |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -65 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | .115 A |
Peak Reflow Temperature (C): | 260 |
ECCN | EAR99 |
ECCN Governance | EAR |
HTS | 8541.21.00.95 |
SB | 8541.21.00.80 |