Onsemi MMBT3904LT1G
|
|
||||
|
|
Enhance your electronic designs with the MMBT3904LT1G by Onsemi, a top-quality small signal bipolar junction transistor that guarantees reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for a variety of applications. With a compact package shape and surface mount capability, it offers convenience and versatility. Experience superior functionality and efficiency with a maximum collector-emitter voltage of 40V and a minimum DC current gain of 30. Trust the MMBT3904LT1G to deliver outstanding results in your projects, making it the perfect choice for electronics enthusiasts and professionals alike.
Package Body Material: PLASTIC/EPOXY
The use of plastic/epoxy material in the package body makes the transistor lightweight, durable, and cost-effective.
Polarity or Channel Type: NPN
NPN transistors are commonly used and easily interchangeable, making this product versatile and compatible with existing circuit designs.
Configuration: SINGLE
The single configuration simplifies the circuit design and makes it easier to use in various applications.
Surface Mount: YES
Being surface-mount compatible allows for easier and more efficient PCB assembly and space-saving designs.
Maximum Power Dissipation (Abs): 0.3 W
With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating or failing.
Minimum DC Current Gain (hFE): 30
A minimum DC current gain of 30 ensures reliable and consistent amplification in various electronic circuits.
Maximum Operating Temperature: 150 °C
The high maximum operating temperature of 150°C allows the transistor to operate in harsh environments without performance degradation.
Maximum Collector-Emitter Voltage: 40 V
The high maximum collector-emitter voltage rating of 40 V provides flexibility in voltage range for different applications.
Max Turn On Time (ton): 70 ns
The fast turn-on time of 70 ns ensures quick response in switching applications, improving overall efficiency.
Maximum Collector Current (IC): 0.2 A
With a maximum collector current of 0.2 A, this transistor can handle moderate current levels in various electronic circuits.
Nominal Transition Frequency (fT): 300 MHz
The high nominal transition frequency of 300 MHz indicates good high-frequency performance, suitable for RF and switching applications.
| Nominal Transition Frequency (fT): | 300 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .2 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Turn On Time (ton): | 70 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 250 ns |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 30 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
| HTS | 8541.21.00.95 |
| SB | 8541.21.00.80 |
