Onsemi MMBT2907ALT1G

MMBT2907ALT1G by Onsemi
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Active
Manufacturer
Onsemi
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Description
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

Upgrade your electronic devices with the high-quality MMBT2907ALT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-of-the-line Small Signal Bipolar Junction Transistors (BJT) like no other. Whether you're looking to enhance the performance of your switching applications or boost the power dissipation of your circuits, this PNP transistor is the perfect solution. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, the MMBT2907ALT1G offers unmatched reliability and efficiency. Trust Onsemi to provide you with the innovative technology you need for all your electronics projects.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and cost-effective compared to other materials.

Polarity or Channel Type: PNP

PNP transistors complement certain circuit designs and can be used in a wide range of applications.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient performance in control circuits.

Surface Mount: YES

Surface mount capability makes it easy to integrate into PCBs, saving space and allowing for automated assembly processes.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can be used in a variety of applications requiring higher voltage handling.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for demanding environments and applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for faster switching speeds, making it suitable for high-frequency applications.

Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 45 ns
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 100 ns
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Peak Reflow Temperature (C): 260
ECCN EAR99
ECCN Governance EAR
NSN 5961-01-561-2148, 5961015612148
NIIN 015612148