Vishay Intertechnology 2N7002-T1-E3

2N7002-T1-E3 by Vishay Intertechnology
Lifecycle Status
NRFND
Manufacturer
Vishay Intertechnology
Datasheet
VIEW
Free Samples
REQUEST
Description
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY;

Unleash the power of cutting-edge technology with the 2N7002-T1-E3 by Vishay Intertechnology. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With a sleek design and high-quality construction, this N-Channel transistor is a game-changer in the world of electronics. Experience seamless operation and enhanced efficiency with the 2N7002-T1-E3. Elevate your projects to new heights with this innovative solution from Vishay Intertechnology.

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics and are commonly used in switching applications.

Configuration: SINGLE

Simplified design with a single transistor for easier installation and maintenance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Surface Mount: YES

Easily mounted on PCBs, facilitating automated assembly processes and saving space.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, expanding the range of applications where it can be used.

Maximum Drain Current (Abs) (ID): 0.115 A

Can handle moderate current loads, suitable for many small signal applications.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power handling capability for its size, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Known for low power consumption and high switching speeds, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Can operate in higher temperature environments, expanding its range of applications.

Maximum Drain-Source On Resistance: 7.5 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency.

Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .115 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 7.5 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 5 pF
JEDEC-95 Code: TO-236
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOW THRESHOLD
Maximum Drain Current (Abs) (ID): .115 A
Peak Reflow Temperature (C): 260
ECCN EAR99
ECCN Governance EAR