Lucentia Tech - Products

Onsemi FDD5614P

Lifecycle Status

Discontinued

Manufacturer

Onsemi

Datasheet

VIEW

Free Samples

REQUEST

Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Moisture Sensitivity Level (MSL): 1;

Discover the FDD5614P by Onsemi, a high-quality Power Field Effect Transistor designed for switching applications. With its P-Channel configuration and built-in diode, this transistor offers unmatched efficiency and reliability. Whether you're looking to optimize power management in automotive, industrial, or consumer electronics, the FDD5614P delivers exceptional performance with a maximum drain current of 15A and low on-resistance. Trust Onsemi's expertise in semiconductor technology to bring you cutting-edge solutions that enhance your products' capabilities. Upgrade your designs today with the FDD5614P.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this FET lightweight and durable, ideal for portable and rugged applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer low on-resistance and high current-carrying capabilities, making them efficient for power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against back EMF, offering added convenience and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast and efficient control over power flow in a circuit.

Surface Mount: YES

The surface mount capability allows for easy and compact PCB assembly, saving space and reducing overall system size.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltage levels without the risk of damage, ensuring safe and reliable operation.

Package Shape: RECTANGULAR

The rectangular shape of the package offers versatility in mounting options and compatibility with various layouts, enhancing ease of installation.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, reducing the risk of signal loss or disconnection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the FET's conductivity, enabling precise and efficient power management.

Maximum Pulsed Drain Current (IDM): 45 A

With a high pulsed drain current rating, this FET can handle sudden spikes in current without the risk of overheating or failure.

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	45 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	42 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.1 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	90 mJ
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	15 A
Peak Reflow Temperature (C):	260

ECCN	EAR99
ECCN Governance	EAR

REQUEST QUOTE

POPULAR PRODUCTS

SMBJ18CA

Transpro Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;

SMBJ18CA

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

M39029/58-360

TE Connectivity

TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.

1N4148

Central Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAV99

First Components International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148WT

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

BSS138

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

1N4148

Nte Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

STM32F405RGT6

STMicroelectronics

STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.

LL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LM358N

Kec

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

ULN2803ADWRG4

Texas Instruments

ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.

LM107H/883C

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;

ULN2803A

Motorola

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMBJ18CA

Good-ark Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

ATMEGA328P-AU

Atmel

MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;

CL10B104KB8NNNC

Samsung Electro-mechanics

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.