Infineon Technologies IRLML6401TRPBF
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Elevate your power management solutions with the IRLML6401TRPBF by Infineon Technologies, a top-tier manufacturer known for delivering high-quality Power Field Effect Transistors (FET). This P-CHANNEL transistor offers seamless switching capabilities in a compact and efficient package. With a built-in diode and an array of impressive features, this product is perfect for a wide range of applications. From enhancing performance to optimizing power consumption, Infineon's IRLML6401TRPBF provides exceptional value and reliability, making it the ideal choice for your next project.
Package Body Material: PLASTIC/EPOXY
The use of plastic/epoxy in the package body makes this FET durable and resistant to external elements, ensuring a long lifespan.
Polarity or Channel Type: P-CHANNEL
P-channel design allows for efficient control and switching capabilities, making this FET suitable for various applications.
Configuration: SINGLE WITH BUILT-IN DIODE
The built-in diode in this FET simplifies circuit design and enhances overall performance, making it a practical choice for switching applications.
Transistor Application: SWITCHING
Designed specifically for switching applications, this FET offers reliable performance and efficient operation in a wide range of scenarios.
Surface Mount: YES
With the ability to be surface-mounted, this FET can save valuable space on the circuit board and streamline the manufacturing process.
Minimum DS Breakdown Voltage: 12 V
The minimum breakdown voltage of 12V ensures that this FET can handle the required voltage levels, making it a reliable choice for various applications.
Package Shape: RECTANGULAR
The rectangular package shape offers easy integration into circuit designs and allows for efficient use of space in the circuit layout.
Terminal Form: GULL WING
The gull wing terminal form provides secure connections and ease of soldering, ensuring a reliable electrical connection in the circuit.
Operating Mode: ENHANCEMENT MODE
With enhancement mode operation, this FET offers precise control and high performance, making it a versatile choice for switching applications.
Maximum Pulsed Drain Current (IDM): 34 A
The high maximum pulsed drain current rating of 34A allows for handling of peak current loads, making this FET suitable for high-power applications.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.3 A |
| Maximum Pulsed Drain Current (IDM): | 34 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1.3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 1.3 W |
| Maximum Drain-Source On Resistance: | .05 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 33 mJ |
| Maximum Feedback Capacitance (Crss): | 125 pF |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 12 V |
| Qualification: | Not Qualified |
| Additional Features: | ULTRA LOW RESISTANCE |
| Maximum Drain Current (Abs) (ID): | 4.3 A |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
| HTS | 8541.29.00.95 |
| SB | 8541.29.00.80 |
