| Package Body Material: |
PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): |
30 |
| Configuration: |
SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: |
SILICON |
| Field Effect Transistor Technology: |
METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: |
SWITCHING |
| Maximum Drain Current (ID): |
.32 A |
| Surface Mount: |
YES |
| Terminal Finish: |
TIN |
| No. of Terminals: |
3 |
| Terminal Position: |
DUAL |
| Package Style (Meter): |
SMALL OUTLINE |
| JESD-30 Code: |
R-PDSO-G3 |
| No. of Elements: |
1 |
| Package Shape: |
RECTANGULAR |
| Terminal Form: |
GULL WING |
| Operating Mode: |
ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: |
1.6 ohm |
| Moisture Sensitivity Level (MSL): |
1 |
| Other Names: |
BSS138BKW,115-ND<br>BSS138BKW115<br>568-10470-1<br>568-10470-2<br>568-10470-2-ND<br>568-10470-1-ND<br>5202-BSS138BKW,115TR<br>934065731115<br>1727-1262-6<br>568-10470-6-ND<br>568-10470-6<br>1727-1262-1<br>1727-1262-2 |
| Polarity or Channel Type: |
N-CHANNEL |
| JESD-609 Code: |
e3 |
| Minimum DS Breakdown Voltage: |
60 V |
| Additional Features: |
LOGIC LEVEL COMPATIBLE |
| Reference Standard: |
AEC-Q101 |
| Peak Reflow Temperature (C): |
260 |