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NXP Semiconductors BSS138BK,215

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NXP Semiconductors

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Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Moisture Sensitivity Level (MSL): 1; No. of Elements: 1;

Discover the power of the BSS138BK,215 by NXP Semiconductors, a high-quality Power FET that delivers unmatched performance and reliability. With its N-CHANNEL configuration and ENHANCEMENT MODE operation, this transistor is perfect for a wide range of applications. From consumer electronics to industrial automation, this versatile component offers exceptional value and benefits to customers seeking cutting-edge technology. Trust NXP Semiconductors for innovative solutions that exceed expectations.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used in power applications due to their high efficiency and low ON-state resistance.

Configuration: SINGLE

Single configuration FETs are easy to use and implement in circuits, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and labor costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the device's operation and can be used in a wider range of applications.

Maximum Drain Current (Abs): 0.36 A

With a high maximum drain current, this FET can handle various power requirements in different applications.

Maximum Power Dissipation (Abs): 0.42 W

Efficient power dissipation ensures the FET can operate within its limits without overheating, enhancing its reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, reliability, and efficiency in power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand harsh environments and operate reliably under varying conditions.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in circuit assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature during assembly minimizes thermal stress on the device and improves overall solder joint quality.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures proper soldering and rework processes, leading to better product quality and reliability.

Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.36 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Maximum Power Dissipation (Abs):	.42 W
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.36 A
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

ECCN	EAR99
ECCN Governance	EAR

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