Texas Instruments ULN2003ADR

ULN2003ADR by Texas Instruments
Lifecycle Status
Active
Manufacturer
Texas Instruments
Datasheet
VIEW
Free Samples
REQUEST
Description
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V; Package Body Material: PLASTIC/EPOXY;

Unleash the power of innovation with the ULN2003ADR by Texas Instruments, a top-quality small signal bipolar junction transistor designed for high-performance switching applications. With Texas Instruments' reputation for excellence in manufacturing, this NPN transistor offers unparalleled reliability and efficiency. Whether you're working on robotics, automotive systems, or industrial controls, this versatile component will exceed your expectations. Experience seamless integration, optimal performance, and long-lasting durability with the ULN2003ADR. Elevate your projects to new heights with Texas Instruments' cutting-edge technology.

Package Body Material: PLASTIC/EPOXY

Provides good thermal performance and durability, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used type of transistor that allows for easy integration into existing circuits.

Configuration: COMPLEX

Allows for more customization and functionality in circuit design.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and space-efficient mounting on PCBs.

Maximum VCEsat: 1.6 V

Low VCEsat value minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Offers a compact form factor for easier integration into circuit designs.

Terminal Form: GULL WING

Facilitates easy soldering and connection on PCBs.

No. of Elements: 7

Provides flexibility and functionality for complex circuit designs.

No. of Terminals: 16

Offers multiple connectivity options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on PCB layouts.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage rating for many switching applications.

Transistor Element Material: SILICON

Common material with good electrical properties for transistor applications.

Maximum Collector Current (IC): 0.5 A

Adequate current rating for various small signal applications.

Terminal Finish: Matte Tin (Sn)

Provides reliable solder joint and corrosion resistance.

Terminal Position: DUAL

Offers flexibility in PCB layout and connection options.

Peak Reflow Temperature °C: 260

Withstands high temperatures during assembly processes.

Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: MS-012AC
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 16
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G16
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): 260
Maximum VCEsat: 1.6 V
Moisture Sensitivity Level (MSL): 1
ECCN EAR99
ECCN Governance EAR
HTS 8542.39.00.01
SB 8542.39.00.00