Diodes Incorporated BSS84-7-F
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Enhance your electronic designs with the BSS84-7-F by Diodes Incorporated, a top-quality P-channel small signal field effect transistor ideal for switching applications. With a built-in diode and a maximum drain-source on resistance of 10 ohms, this enhancement mode transistor offers superior performance and reliability. The matte tin terminal finish ensures optimal connectivity, while the compact gull wing package allows for easy surface mounting. Trust in Diodes Incorporated's expertise in semiconductor technology to deliver a product that promises efficiency and precision in every use. Upgrade your circuits today with the BSS84-7-F and experience the difference firsthand.
Package Body Material: PLASTIC/EPOXY
The plastic/epoxy material is durable and can protect the transistor from physical damage, making it a reliable choice for various applications.
Polarity or Channel Type: P-CHANNEL
P-channel transistors offer low on-resistance and high input impedance, making them suitable for switching applications and power management circuits.
Configuration: SINGLE WITH BUILT-IN DIODE
The built-in diode allows for protection against reverse current flow, increasing the reliability and efficiency of the transistor.
Transistor Application: SWITCHING
Designed for switching applications, this transistor can efficiently control the flow of current, making it ideal for use in digital circuits and power supplies.
Surface Mount: YES
Being surface mountable, this transistor can easily be mounted on PCBs, saving space and simplifying the manufacturing process.
Minimum DS Breakdown Voltage: 50 V
With a minimum breakdown voltage of 50V, this transistor can handle higher voltages, making it suitable for a variety of industrial and automotive applications.
Maximum Drain Current (Abs) (ID): 0.13 A
Capable of handling a maximum drain current of 0.13A, this transistor can efficiently switch high currents without overheating or failing prematurely.
Maximum Power Dissipation (Abs): 0.3 W
With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels without getting damaged, ensuring reliable operation.
Maximum Operating Temperature: 150 °C
With a high maximum operating temperature of 150°C, this transistor can operate reliably in harsh environments without any performance degradation.
Maximum Drain-Source On Resistance: 10 ohm
The low on-resistance of 10 ohms ensures minimal voltage drop across the transistor, resulting in efficient power management and reduced heat generation.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .13 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 10 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Feedback Capacitance (Crss): | 12 pF |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 50 V |
| Qualification: | Not Qualified |
| Additional Features: | HIGH RELIABILITY, LOW THRESHOLD |
| Maximum Drain Current (Abs) (ID): | .13 A |
| Peak Reflow Temperature (C): | 260 |
| ECCN | EAR99 |
| ECCN Governance | EAR |
