| Package Body Material: |
PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): |
NOT SPECIFIED |
| Configuration: |
SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: |
SILICON |
| Field Effect Transistor Technology: |
METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: |
SWITCHING |
| Maximum Drain Current (ID): |
.22 A |
| Sub-Category: |
FET General Purpose Power |
| Surface Mount: |
YES |
| Terminal Finish: |
Matte Tin (Sn) - annealed |
| No. of Terminals: |
3 |
| Maximum Power Dissipation (Abs): |
.36 W |
| Terminal Position: |
DUAL |
| Package Style (Meter): |
SMALL OUTLINE |
| JESD-30 Code: |
R-PDSO-G3 |
| No. of Elements: |
1 |
| Package Shape: |
RECTANGULAR |
| Terminal Form: |
GULL WING |
| Operating Mode: |
ENHANCEMENT MODE |
| Maximum Operating Temperature: |
150 Cel |
| Maximum Drain-Source On Resistance: |
6 ohm |
| Moisture Sensitivity Level (MSL): |
1 |
| Maximum Feedback Capacitance (Crss): |
10 pF |
| Polarity or Channel Type: |
N-CHANNEL |
| JESD-609 Code: |
e3 |
| Minimum Operating Temperature: |
-55 Cel |
| Minimum DS Breakdown Voltage: |
50 V |
| Qualification: |
Not Qualified |
| Additional Features: |
LOGIC LEVEL COMPATIBLE |
| Maximum Drain Current (Abs) (ID): |
.2 A |
| Peak Reflow Temperature (C): |
NOT SPECIFIED |
