NTE248 Nte Electronics | Transistors

Nte Electronics NTE248

Lifecycle Status

Active

Manufacturer

Nte Electronics

Datasheet

VIEW

Free Samples

REQUEST

Description

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 12 A; Terminal Position: BOTTOM;

Looking for a reliable and high-quality Power Bipolar Junction Transistor? Look no further than the NTE248 by Nte Electronics. With its PNP polarity, DARLINGTON configuration, and built-in diode and resistor, this transistor is perfect for amplifier applications. Its 150W power dissipation and 12A collector current make it a powerful and efficient choice. Trust in Nte Electronics' reputation for excellence and choose the NTE248 for your next project. Experience the value and benefits of this top-notch product today!

Package Body Material: METAL

Metal package provides better heat dissipation, ensuring the transistor operates at lower temperatures and higher efficiency.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and are ideal for specific applications where PNP transistors are required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and built-in diode and resistor provide additional functionality and protection in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance for amplifying signals.

Package Shape: ROUND

Round package shape may provide better mechanical stability and ease of mounting in certain applications.

No. of Terminals: 2

With only 2 terminals, the transistor is easy to connect and integrate into circuits.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows the transistor to withstand higher voltages in the circuit.

Maximum Collector Current (IC): 12 A

High collector current rating enables the transistor to handle large current flows in the circuit.

Package Body Material:	METAL
Maximum Collector Current (IC):	12 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-3
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	100
No. of Terminals:	2
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	150 W
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Power Dissipation Ambient:	150 W

ECCN	EAR99
ECCN Governance	EAR
HTS	8541.29.00.95
SB	8541.29.00.80

REQUEST QUOTE

POPULAR PRODUCTS

1N4148WT

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIC18F4550-I/P

Microchip Technology

PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.

LL4148

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

2N2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

BAV99

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;

SS14

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SS14

Rfe International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

2N7002

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

STM8S003F3P6TR

STMicroelectronics

STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.

BAV99

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.

BSS138

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

LL4148

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MBRA160T3G

Onsemi

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

2N2222A

Tesla Elektronicke Soucastky

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

LAN8720AI-CP-TR

Microchip Technology

LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.

BSS84-7-F

Diodes Incorporated

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.