Nte Electronics NTE248
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Looking for a reliable and high-quality Power Bipolar Junction Transistor? Look no further than the NTE248 by Nte Electronics. With its PNP polarity, DARLINGTON configuration, and built-in diode and resistor, this transistor is perfect for amplifier applications. Its 150W power dissipation and 12A collector current make it a powerful and efficient choice. Trust in Nte Electronics' reputation for excellence and choose the NTE248 for your next project. Experience the value and benefits of this top-notch product today!
Package Body Material: METAL
Metal package provides better heat dissipation, ensuring the transistor operates at lower temperatures and higher efficiency.
Polarity or Channel Type: PNP
PNP transistors are commonly used in amplifier circuits and are ideal for specific applications where PNP transistors are required.
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Darlington configuration offers high current gain and built-in diode and resistor provide additional functionality and protection in circuit design.
Transistor Application: AMPLIFIER
Specifically designed for amplifier applications, ensuring optimal performance for amplifying signals.
Package Shape: ROUND
Round package shape may provide better mechanical stability and ease of mounting in certain applications.
No. of Terminals: 2
With only 2 terminals, the transistor is easy to connect and integrate into circuits.
Maximum Power Dissipation (Abs): 150 W
High power dissipation capability allows the transistor to handle large amounts of power without overheating.
Maximum Collector-Emitter Voltage: 100 V
High collector-emitter voltage rating allows the transistor to withstand higher voltages in the circuit.
Maximum Collector Current (IC): 12 A
High collector current rating enables the transistor to handle large current flows in the circuit.
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | 12 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| JEDEC-95 Code: | TO-3 |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | PNP |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 100 |
| No. of Terminals: | 2 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 150 W |
| Maximum Collector-Emitter Voltage: | 100 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-MBFM-P2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | PIN/PEG |
| Case Connection: | COLLECTOR |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Power Dissipation Ambient: | 150 W |
| ECCN | EAR99 |
| ECCN Governance | EAR |
| HTS | 8541.29.00.95 |
| SB | 8541.29.00.80 |
